High resolution X-ray Photoelectron Spectroscopy (XPS) was used to analyze thin layers of germanium oxide grown on germanium substrates under various conditions. The results reveal the presence of high density of electron states located at the oxide /germanium interface that lead to the energy band bending. The surface of native oxide layers and that of thin oxide layer grown under dry oxygen c...

The two-electron reduction of a Group 14-element(I) complex [RË⋅] (E=Ge, R=supporting ligand) to form a novel low-valent dianion radical with the composition [RË:]˙(2-) is reported. The reaction of [LGeCl] (1, L=2,6-(CH=NAr)2C6H3, Ar=2,6-iPr2C6H3) with excess calcium in THF at room temperature afforded the germylidenediide dianion radical complex [LGe]˙(2-)⋅Ca(THF)3(2+) (2). The reaction procee...

We report our results of continuous illumination of Ge46S54 chalcogenide glass films with bandgap light in air. The outcome of this process is the formation of Ge–S backbone depleted in germanium. We relate this to consumption of some of the germanium available in the initial material due to the occurrence of a photoinduced oxidation. This is proved using energy dispersion spectroscopy which sh...

Herein, we describe the controlled growth of 1 dimensional germanium nanostructures from high aspect ratio nanowires (>10 microns in length) to shorter aspect nanorods (100 nm in length) via a simple pyrolysis method. The synthetic route involves the thermal decomposition of selected germanium precursors by dropping a solution in a high boiling point solvent directly onto a pre-heated Si wafer ...

Achieving quantum dot self-assembly at precise pre-defined locations is of vital interest. In this work, a novel physical method for producing germanium quantum dots on silicon using nanoindentation to pre-define nucleation sites is described. Self-assembly of ordered ~10 nm height germanium quantum dot arrays on silicon substrates is achieved. Due to the inherent simplicity and elegance of the...

The EXOGAM clover detector consists of four high-purity germanium (HPGe) crystals in a common cryostat. Each individual crystal is electrically segmented into four regions. We propose a method based on a multidimensional fitting procedure to calibrate the energy from the segments. This method could be used for any kind of segmented germanium detector. Its application to the EXOGAM clover is dis...

Recently we have demonstrated a process for generating uniaxial tensile strain in silicon. In this work, we generate uniaxially strained silicon and anisotropically strained silicon germanium on insulator with strain in both 100 and 110 in-plane directions. The strain is uniform over fairly large areas, and relaxed silicon-germanium alloy buffers are not used. The magnitude of uniaxial strain g...

Several encapsulated single Germanium detectors have been mounted in one unit and integrated in a cryostat, in order to build efficient spectrometers to detect γ radiation emitted by nuclei excited in nuclear reactions. This kind of crystal encapsulation offer advantages compared to standard set-up of HPGedetectors. The basic aim of the following work is to develop a new capsule technology, in ...

We grow hydrogenated amorphous silicon-germanium alloys by the hot-wire chemical vapor deposition technique at deposition rates between 0.5 and 1.4 nanometers per second. We prepared a set of these alloys to determine the concentrations of the alloying elements as measured by various techniques. This set consists of samples throughout the range of germanium alloying from 0% (a-Si:H) to 100% (a-...

The toxicity of triethyland tri-n-butyl-germanium acetates has been studied after their administration to rats. Both compounds had a low toxicity. Triethylgermanium had less than one-tenth of the toxicity of triethyltin or triethyl-lead and, unlike them, it did not appear to have a predominant action on the central nervous system. In biochemical studies in vitro, tri-n-butylgermanium was found ...