Electrolyte-gated organic thin-film transistors (OTFTs) can offer a feasible platform for future flexible, large-area and low-cost electronic applications. These transistors can be divided into two groups on the basis of their operation mechanism: (i) field-effect transistors that switch fast but carry much less current than (ii) the electrochemical transistors which, on the contrary, switch sl...

Articles you may be interested in Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors Appl. Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition Appl. Detection of organic vapors by graphene films functionalized with metallic nanoparticles Oxygen sensing properties at high temperatu...

Coexistence of metallic and semiconducting carbon nanotubes in as-grown samples sets important limits to their application in high-performance electronics. We present the metal-to-semiconductor conversion of carbon nanotubes for field-effect transistors based on both aligned nanotubes and individual nanotube devices. The conversion process is induced by light irradiation, scalable to wafer-size...

Graphene Field-Effect Transistors In article 2201945, Matthew B. Coppock, Brett Goldsmith, Kiana Aran, and co-workers develop a single multiomics test for detection of respiratory diseases using scalable graphene-based transistors. The embrace complex, real-time data, available via transistors - converted into human understandable information with the aid bioinformatics. This can be conceived a...

An overview of recent results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular nonlinearity and dynamic range of these detectors are discussed. We present also results on THz detection by Graphene field effect transistors. As a conclusion, we will show one of the first real world application of the FET THz detectors: a d...

Quantum confinement of carriers has a substantial impact on nanoscale device operations. We present electrical transport analysis for lithographically fabricated sub-5 nm thick Si nanowire field-effect transistors and show that confinement-induced quantum oscillations prevail at 300 K. Our results discern the basis of recent observations of performance enhancement in ultrathin Si nanowire field...

We analyze the effect of carrier confinement on the charge-transport properties of organic field-effect transistors. Confinement is achieved experimentally by the use of semiconductors of which the active layer is only one molecule thick. The two-dimensional confinement of charge carriers provides access to a previously unexplored charge-transport regime and is reflected by a reduced temperatur...

Investigations of Tunneling for Field Effect Transistors

Articles you may be interested in Observation of gate bias dependent interface coupling in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage method Appl. Trap evaluations of metal/oxide/sil...