Comprehensive physics-based simulations of GaN-based light-emitting diodes and laser diodes are presented. The talk discusses unique material properties of nitride compounds as well as performance-limiting physical mechanisms like self-heating, current crowding, and carrier leakage. Measurements are used to validate the models and to extract critical device parameters.

We demonstrate a proof-of-concept optical spectroscopic system for bioaerosol-particle fluorescence detection, in which a pulsed high-power laser is replaced by a highly compact linear array of sequentially fired light from blue light-emitting diodes. The results suggest that low-cost, compact optical aerosol detection may be feasible with the contemporary emergence of efficient UV light-emitti...

Articles you may be interested in Single carbon nanotube photovoltaic device Scanning photocurrent and photoluminescence imaging of a frozen polymer p-n junction Appl. Large-signal and high-frequency analysis of nonuniformly doped or shaped pn-junction diodes Direct probe of excitonic and continuum transitions in the photocurrent spectroscopy of individual carbon nanotube p-n diodes Appl.

We compare the temperature dependent characteristics of multiple quantum well semiconductor laser diodes and light emitting diodes operating at a wavelength, /z = 1.3 ,um. No model in which Auger recombination is the dominant temperature sensitive parameter can explain our experimental observations. We suggest that net gain is the appropriate temperature dependent variable which determines lase...

The ideal analysis of planar diodes in Temperature Limited Region is presented. Two types of relations are obtained for electric potential and electric field distributions one accurate but implicit and the other almost accurate but explicit.

We have investigated the room-temperature electroluminescent properties of InSb/AlxIn1−xSb quantum-well light-emitting diodes. The maximum emission from diodes containing quantum wells occurred at significantly higher energies than the band gap of InSb. Close agreement between experimental and theoretical data confirms that recombination occurs within the quantum well. © 2006 American Institute...

Description: The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and ...

the performance of nanoscale field effect diodes as a function of the spacer length between two gates is investigated. our numerical results show that the ion/ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for s-fed as the spacer length between two gates increases whereas this ratio is approximately constant for m-fed. the high-frequency perform...