A high-mobility (9000 cm2/V‚s) semiconducting single-walled nanotube transistor is used to construct a nonvolatile charge-storage memory element operating at room temperature. Charges are stored by application of a few volts across the silicon dioxide dielectric between nanotube and silicon substrate, and detected by threshold shift of the nanotube field-effect transistor. The high mobility of ...

The scaling of silicon-based MOSFET technology beyond the 22 nm node is challenging. Further progress requires new materials, innovative structures, and even novel device concepts. All the emergent channel materials need perfect top-gate dielectric stacks in order to sustain their potential device performance. ALD high-k as a common gate stack solution finds itself very successfully integrated ...

The Metal-Ferroelectric-Semiconductor FET (MFSFET) device is structurally similar to a regular MOSFET device except that the gate material is composed of a ferroelectric material (PZT) normally sandwiched between two layers of silicon dioxide. Ferro models the PZT material with a set of four material parameters; the saturation polarization Ps, the remanent polarization Pr, the coercive field Ec...

the oil-paper insulation is a type of an inexpensive combination insulation system in oil-filled power transformers. in this study the dielectric and strength properties of canola oil and mineral oil impregnated hand-sheet papers were investigated. all hand sheets were made of unbleached bagasse soda pulp with two different freeness levels of 200 ± 25 ml, csf and 400± 25 ml,csf. after drying th...

This paper presents the parametric optimization of Symmetric Toggle RF MEMS Switch (STS), particularly for reduction of overall dimensions and improvement in isolation and insertion loss. The variations in device topology, especially the connecting lever length demonstrates a significant change in resonance frequency and overall device dimensions. The impact of multilayer metal structures used ...

We have developed a manufacturing process for organic thin-film transistors and organic complementary circuits in which a microcontact-printed phosphonic acid self-assembled monolayer is employed first as an etch resist to pattern aluminum gate electrodes by wet etching and then as the gate dielectric of the same device. To our knowledge, this is the first report of a printing process for elect...

The aim of an invisibility device is to guide light around any object put inside, being able to hide objects from sight. In this work, we propose a novel design of dielectric invisibility media based on negative refraction and optical conformal mapping that seems to create perfect invisibility. This design has some advantages and more relaxed constraints compared with already proposed schemes. ...

CHARACTERIZATION OF ULTRATHIN GATE DIELECTRICS AND MULTILAYER CHARGE INJECTION BARRIERS by Edwin M. Dons Since the invention of the first integrated circuit, the semiconductor industry has distinguished itself by a phenomenally rapid pace of improvements in device performance. This trend of ever smaller and faster devices is a result of the ability to exponentially reduce feature sizes of integ...

The performance of carbon nanotube-based transistor is analyzed. The effect of geometrical parameters on the device performance is investigated as d tunnel. We have studied the influence of the material parameters, such as the height of the SB (ΦSB), and some other physical parameters like the nanotube chirality, the gate oxide thickness and the gate oxide dielectric permittivity Our results sh...

The behavior of ferroelectric domain under applied electric field is very sensitive to point defects, which can lead to high temperature dielectric relaxation behaviors. In this work, the phases, dielectric properties and ferroelectric switching behavior of strontium lead titanate ceramics were investigated. The structural characterization is confirmed by X-ray diffraction. The high dielectric ...