Under sufficiently high dose and energy, ions implanted into a semiconductor will produce an amorphous layer throughout the range in which nuclear stopping is the dominant mechanism for slowing the ions. In arsenic implanted silicon, for example, this corresponds to doses greater than 1014ions/cm2 and energies above 10 keV. Using a model for thermal and plasma wave-induced modulated reflectance...

Digital radiographic flat-panel detectors may operate with direct or indirect manners of converting x-ray photon energy into spatial energy signals. Advances in both technologies have led to radiographic work areas that are faster and lend toward lower patient radiation doses. Superior image quality with an abundance of post-processing capabilities is a benefit as well. Whether based on amorpho...

Positron beam and helium desorption techniques have been applied to different materials, in particular semiconductor materials, to determine the presence of defects. The positron technique yields values of the positron diffusion length and values of the Doppler broadening parameters. In principle, defect concentrations can be derived and an indication can be obtained about the nature of the def...

The main objective of this research is to develop a micro and nanogap structure using dry anisotropic etching –Reactive Ion EtchingRIE. Amorphous silicon material is used in the micro and nanogap structure and gold as electrode. The fabrication processes of the micro and nanostructure are based on conventional photolithography, wet etching for the Al pattern and wet etching for a-Si pattern usi...

Hydrogenated amorphous silicon (a-Si:H) has been already considered for the objective of passive optical elements, like waveguides and ring resonators, within photonic integrated circuits at λ = 1.55 μm. However the study of its electro-optical properties is still at an early stage, therefore this semiconductor in practice is not considered for light modulation as yet. We demonstrated, for the ...

Pulsed laser irradiation is employed over a wide spectrum of materials processing applications, including surface hardening, alloying, curing, synthesis of compound and semiconductor films. In semiconductor systems,* it is used to anneal ion-implantation surface damage, recrystallize amorphous and polycrystalline films, and enhance dopant diffusion. Recent studies2 have shown that one of the mo...

Rapid progress in two-dimensional (2D) crystalline materials has recently enabled a range of device possibilities. These possibilities may be further expanded through the development of advanced 2D glass materials. Zachariasen carbon monolayer, a novel amorphous 2D carbon allotrope, was successfully synthesized on germanium surface. The one-atom-thick continuous amorphous layer, in which the in...

In this work, real-time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a-IGZO) is used as semiconductor material and gold metal electrodes. The readout of an individual sensor implemented by a transimpedance amplifier (TIA) consisting all-enhancement a-IGZO thin-film transistor (TFT) operational switched capacitor...

In an effort to extend the scaling of advanced complementary metal-oxide semiconductor devices, strain has been incorporated to enhance carrier mobility. In this study, the effect of strain on the solid-phase epitaxial regrowth process of patterned wafers was explored. Implants of 1 !1015/cm2 Si+ with an energy of 40 keV were introduced into these patterned regions forming a continuous amorphou...