Numerical Simulations are employed to create amorphous nano-films of a chosen thickness on a crystalline substrate which induces strain on the film. The films are grown by a vapor deposition technique which was recently developed to create very stable glassy films. Using the exact relations between the Hessian matrix and the shear and bulk moduli we explore the mechanical properties of the nano...

Nanocrystalline fluorinated silicon films are studied by using Raman spectroscopy, electron paramagnetic resonance, Fourier-transformed infrared spectroscopy, atomic force microscopy, nonlinear laser spectroscopy, and photoluminescence. Electrical properties of nanocrystalline silicon and amorphous silicon films were compared. The field-assisted migration of point defects is dramatic for durabi...

A nonlinear stochastic growth equation for the spatiotemporal evolution of the surface morphology of amorphous thin films in the presence of potential density variations is derived from the relevant physical symmetries and compared to recent experimental results. Numerical simulations of the growth equation exhibit a saturation of the surface morphology for large film thickness originating from...

An analysis of the electronic properties of amorphous semiconductor–electrolyte junction is reported for thin (Dox < 20 nm) passive film grown on Nb in acidic electrolyte. It will be shown that the theory of amorphous semiconductor–electrolyte junction (a-SC/El) both in the low band-bending and high band-bending regime is able to explain the admittance data of a-Nb2O5/El interface in a large ra...

The electron field-emission properties of hydrogenated amorphous carbon and nitrogenated tetrahedral amorphous carbon thin films are examined by measuring the field-emission current as a function of the applied macroscopic electric field. The experimental results indicate the existence of an optimum film thickness for low-threshold electron field emission. The predictions of various emission mo...

-poly(vinylidene fluoride)— -PVDF—exhibits ferroelectric properties due to the special arrangement of the chain units in the crystalline phase. The ferroelectric phase can be optimised by poling the original stretched film, that tends to align the randomly organised crystallites against the applied field. In this work, polarised and non-polarised -PVDF from the same batch are characterised by m...

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In this paper, the development of wafer bonding techniques of the most frequently used materials Si-to-glass, glass-to-glass and Si-to-Si is reported. To improve the bond quality of Si-to-glass and make glass-to-glass bonding viable at bonding temperatures less than 300 C, a hydrogen-free amorphous silicon layer of 20-100 nm thickness is deposited as an intermediate layer. For Si-to-glass bondi...

Amorphous semiconducting materials have unique electrical properties that may be beneficial in nanoelectronics, such as low leakage current, charge memory effects, and hysteresis functionality. However, electrical characteristics between different or neighboring regions in the same amorphous nanostructure may differ greatly. In this work, the bulk and surface local charge carrier transport prop...

In this paper, hardware realization of Cellular Neural Networks in amorphous silicon thin film technology is proposed. In this way, it is possible to realize inexpensive large-scale, easily programmable circuits, with integrated light-sensing and -emitting devices.