Quantum current modelling on tri-layer graphene nanoribbons in limit degenerate and non-degenerate

Graphene is determined by a wonderful carrier transport property and high sensitivityat the surface of a single molecule, making them great as resources used in Nano electronic use.TGN is modeled in form of three honeycomb lattices with pairs of in-equivalent sites as {A1, B1},{A2, B2}, and {A3, B3} which are located in the top, center and bottom layers, respectively. Trilayergraphene has two types of stable configurations, ABA and ABC stacking orders. In both types, the firsttwo layers are Bernal-stacked, where one sub lattice of the middle layer is located above the center ofthe hexagons of the bottom layer. The TGN is shown to have different electronic properties which arestrongly dependent on the interlayer stacking sequence. ABA-stacked TGN with width and thicknessless than De-Broglie wave length can be assumed as a one dimensional material. The present researchmodels transmission coefficient of the Schotcky structure in the graphene-based transistor based onsemiconducting channel width and then analysis its quantum properties given dependence on structuralparameter. At the same time, the quantum current is presented based on the transmission coefficient forthe trilayer graphene. Then, we obtain the quantum current of the proposed structure in the degenerateand non-degenerate states and compare it with experimental data.