Memristor Bridge Synapse Application for Integrate and Fire and Hodgkin-Huxley Neuron Cell

Memory resistor or memristor is already fabricated successfully using current nano dimension technology. Based on its unique hysteresis, the amount of resistance remains constant over time, controlled by the time, the amplitude, and the polarity of the applied voltage. The unique hysteretic current-voltage characteristic in the memristor causes this element to act as a non-volatile resistive memory, to store the information till the next perturbation. In this paper, a bridge consisting of four memristors is introduced as a synapse to connect the two neuron cells, leaky integrate-and-fire, and Hodgkin-Huxley neuron cells. The use of memristor bridge synapse in the proposed architecture solves one of the major problems, regarding nonvolatile weight storage in analog neural network implementations. By changing different values of each memristor, the synaptic weight will be programmable. The current-voltage characteristics and their weight variations will be examined in the behavior of neuron spikes.