A Low Power Full Adder Cell based on Carbon Nanotube FET for Arithmetic Units
نویسندگان
چکیده مقاله:
In this paper, a full adder cell based on majority function using Carbon-Nanotube Field-Effect Transistor (CNFET) technology is presented. CNFETs possess considerable features that lead to their wide usage in digital circuits design. For the design of the cell input capacitors and inverters are used. These kinds of design method cause a high degree of regularity and simplicity. The proposed design can be used in many applications specifically wherever the low power consumption is the goal. The proposed full adder cell is compared to five full adders in terms of power consumption, speed, and power delay product (PDP). Also in order to evaluate the proposed design, several simulations are performed in different load capacitors, frequencies and temperatures. Simulation results demonstrate the higher efficiency of the proposed full adder cell with respect to other conventional and modern CNFET and MOSFET implementations. All Simulations are performed by using Synopsys HSPICE with 32 nm CMOS and 32 nm CNFET technologies.
منابع مشابه
A High-Speed Dual-Bit Parallel Adder based on Carbon Nanotube FET technology for use in arithmetic units
In this paper, a Dual-Bit Parallel Adder (DBPA) based on minority function using Carbon-Nanotube Field-Effect Transistor (CNFET) is proposed. The possibility of having several threshold voltage (Vt) levels by CNFETs leading to wide use of them in designing of digital circuits. The main goal of designing proposed DBPA is to reduce critical path delay in adder circuits. The proposed design positi...
متن کاملCarbon Nanotube Fet Based Full Adder
High speed Full-Adder (FA) module is an important element in designing high performance arithmetic circuits. In this paper, I propose a high speed multiple-valued logic FA module. The proposed FA is designed and constructed with the use of 3 capacitors and 14 transistors, wh e r e t h e t r a n s i s t or s a r e c o n s t r u c t e d b y carbon nano-tube field effect transistor (CNFET) technol...
متن کاملDesigning high-speed, low-power full adder cells based on carbon nanotube technology
This article presents novel high speed and low power full adder cells based on carbon nanotube field effect transistor (CNFET). Four full adder cells are proposed in this article. First one (named CN9P4G) and second one (CN9P8GBUFF) utilizes 13 and 17 CNFETs respectively. Third design that we named CN10PFS uses only 10 transistors and is full swing. Finally, CN8P10G uses 18 transistors and divi...
متن کاملA novel low-power full-adder cell for low voltage
This paper presents a novel low-power majority function-based 1-bit full adder that uses MOS capacitors (MOSCAP) in its structure. It can work reliably at low supply voltage. In this design, the timeconsuming XOR gates are eliminated. The circuits being studied are optimized for energy efficiency at 0.18-mm CMOS process technology. The adder cell is compared with seven widely used adders based ...
متن کاملLow Power Dynamic CMOS Full-Adder Cell
In this paper a new area efficient, high-speed and ultra-low power 1-bit full adder cell is presented. The performance: power, time delay and power delay product (PDP) of the proposed adder cell has been analyzed in comparison with the four existent low-power, high-speed adders. The circuits being studied are optimized for energy efficiency at 0.18-μm CMOS process technology and intensive simul...
متن کاملA universal method for designing low-power carbon nanotube FET-based multiple-valued logic circuits
This study presents new low-power multiple-valued logic (MVL) circuits for nanoelectronics. These carbon nanotube field effect transistor (FET) (CNTFET)-based MVL circuits are designed based on the unique characteristics of the CNTFET device such as the capability of setting the desired threshold voltages by adopting correct diameters for the nanotubes as well as the same carrier mobility for t...
متن کاملمنابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ذخیره در منابع من قبلا به منابع من ذحیره شده{@ msg_add @}
عنوان ژورنال
دوره 10 شماره 3
صفحات 1- 12
تاریخ انتشار 2019-08-01
با دنبال کردن یک ژورنال هنگامی که شماره جدید این ژورنال منتشر می شود به شما از طریق ایمیل اطلاع داده می شود.
میزبانی شده توسط پلتفرم ابری doprax.com
copyright © 2015-2023