peiman keshavarzian
Department of Computer Engineering, Kerman Branch, Islamic Azad University, Kerman, Iran.
[ 1 ] - A Novel Design of Penternary Inverter Gate Based on Carbon Nano Tube
This paper investigates a novel design of penternary logic gates usingcarbon nanotube field effect transistors (CNTFETs). CNTFET is a suitable candidate forreplacing MOSFET with some useful properties, such as the capability of having thedesired threshold voltage by regulating the diameter of the nanotubes. Multiple-valuedlogic (MVL) such as ternary, quaternary, and penternary is a promising al...
[ 2 ] - Design and Implementation of MOSFET Circuits and CNTFET, Ternary Multiplier in the Field of Galois
Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...
[ 3 ] - A Novel Design of Quaternary Inverter Gate Based on GNRFET
This paper presents a novel design of quaternary logic gates using graphene nanoribbon field effect transistors (GNRFETs). GNRFETs are the alternative devices for digital circuit design due to their superior carrier-transport properties and potential for large-scale processing. In addition, Multiple-valued logic (MVL) is a promising alternative to the conventional binary logic design. Sa...
[ 4 ] - High-Speed Penternary Inverter Gate Using GNRFET
This paper introduces a new design of penternary inverter gate based on graphene nanoribbon field effect transistor (GNRFET). The penternary logic is one of Multiple-valued logic (MVL) circuits which are the best substitute for binary logic because of its low power-delay product (PDP) resulting from reduced complexity of interconnects and chip area. GNRFET is preferred over Si-MOSFET for circui...
[ 5 ] - Design and Implementation of MOSFET Circuits and CNTFET, Ternary Multiplier in the Field of Galois
Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...
Co-Authors