Surface Dose Measurements on an Indigenously Made Inhomogeneous Female Pelvic Phantom Using Metal-Oxide-Semiconductor-Field-Effect-Transistor Based Dosimetric System

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...

Radiation therapy treatment unit dose-rate effects on metal–oxide–semiconductor field-effect transistor (MOSFET) detectors

Metal oxide semiconductor field effect transistor (MOSFET) detectors have recently been introduced to radiation therapy. However, the response of these detectors is known to vary with dose rate. Therefore, it is important to evaluate how much variation between the treatment prescribed dose and the dose that is actually delivered to the patient using high-energy photon or electron beams under co...

Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

Sample size requirements for estimating effective dose from computed tomography using solid-state metal-oxide-semiconductor field-effect transistor dosimetry.

PURPOSE Effective dose (ED) is a widely used metric for comparing ionizing radiation burden between different imaging modalities, scanners, and scan protocols. In computed tomography (CT), ED can be estimated by performing scans on an anthropomorphic phantom in which metal-oxide-semiconductor field-effect transistor (MOSFET) solid-state dosimeters have been placed to enable organ dose measureme...

GaN Metal-Semiconductor Field-Effect Transistor Project II

In this paper, we will discuss the modeling and simulation result of GaN MESFET device with our conventional computer added device simulator MEDICI. We will find out material parameter of GaN so that the device characteristics of simulation fit to experimentally built-on device characteristics. Then we will vary some important device parameters such as gate length, channel doping rate, and acti...

GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

Lateral n-channel enhancement-mode GaN metal-oxide-semiconductor MOS field-effect transistors and lateral capacitors have been fabricated on a p-type epi-GaN substrate semiconductor and electrically characterized at different temperatures. A clear positive behavior of the inversion channel mobility with temperature has been obtained. A physics-based model on the inversion charge and charge trap...