Static Simulation of CNTFET-based Digital Circuits

Authors

  • A. G. Perri Electronic Devices Laboratory, Department of Electrical and Information Engineering, Polytechnic University of Bari, Italy.
  • R. Marani Consiglio Nazionale delle Ricerche, Istituto di Studi sui Sistemi Intelligenti per l'Automazione (ISSIA), Bari, Italy.
Abstract:

   In this paper we implement a simple DC model for CNTFETs already proposed by us in order to carry out static analysis of basic digital circuits. To verify the validity of the obtained results, they are compared with those of Wong model, resulting in good agreement, but obtaining a lighter ensuring compile and shorter execution time, which are the main characteristics to have an easy implementation in circuit simulators for CAD applications.

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Journal title

volume 14  issue 2

pages  121- 131

publication date 2018-05-01

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