Process Optimization of Deposition Conditions for Low Temperature Thin Film Insulators used in Thin Film Transistors Displays

Thin Film Transistors & Flexible Displays

Low-temperature thin-film deposition and crystallization.

Crystalline oxide films are important components in a wide array of electronic and optical devices, and their study and manufacture involve major aspects of current science and technology. A plethora of methods, such as sputtering, chemical vapor deposition, pulsed laser deposition, and sol-gel, are commonly used to deposit these films, and many new techniques are being developed (1). In each o...

Low Temperature Polysilicon Thin-Film Transistors on Flexible Substrates

We fabricated low-temperature polycrystalline silicon thin-film transistors (poly-Si TFTs) on flexible substrates using sputtered amorphous Si (a-Si) precursor films. The a-Si precursor films were deposited by using rf-magnetron sputtering system with argon-helium mixture gas to minimize the argon incorporation into the Si film. The a-Si films were laser annealed by using XeCl excimer laser and...

Silicon for thin-film transistors

We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are...

Stable organic thin-film transistors

Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability general...

Fabrication of InGaN thin-film transistors using pulsed sputtering deposition

We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In conte...