Numerical Modeling of Electronic and Electrical Characteristics of 0.3 0.7 Al Ga N / GaN Multiple Quantum Well Solar Cells

The present study was conducted to investigate current density of0.3 0.7 Al Ga N/ GaN multiple quantum well solar cell (MQWSC) under hydrostaticpressure. The effects of hydrostatic pressure were taken into account to measureparameters of 0.3 0.7 Al Ga N/ GaN MQWSC, such as interband transition energy, electronholewave functions, absorption coefficient, and dielectric constant. Finite-differencemethod (FDM) was used to acquire energy eigenvalues and their correspondingeigenfunctions of 0.3 0.7 Al Ga N/ GaN MQW and hole eigenstates were calculated througha 66 k.p method under an applied hydrostatic pressure. It was found that the depth ofthe quantum wells, bandgaps, band offset, the electron, and hole density increases withthe hydrostatic pressure. Also, as the pressure increases, the electron and hole wavefunctions will have less overlap, the amplitude of the absorption coefficient increases,and the binding energy of the excitons decreases. Our results showed that a change inthe pressure up to 10 GPa caused absorption coefficients҆ peaks of light and heavy holesto shift to low wavelengths of up to 32 nm, which in turn decreased short-circuit currentdensity and increased open circuit voltage.