Monte Carlo Simulation of Multiplication Factor in PIN In0.52Al0.48As Avalanche Photodiodes

Authors

  • M. A. Mansouri-Birjandi University of Sistan and Baluchestan
  • M. Soroosh Shahid Chamran University
Abstract:

In this paper, we calculate electron and hole impactionization coefficients in In0.52Al0.48As using a Monte Carlo modelwhich has two valleys and two bands for electrons and holesrespectively. Also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein In0.52Al0.48As PIN avalanche photodiodes. To validate themodel, we compare our simulated results with the experimentalresults.

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Journal title

volume 1  issue 1

pages  21- 24

publication date 2011-09-20

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