Fabrication Of Cu(In,Ga)Se2 Solar Cells With In2S3 Buffer Layer By Two Stage Process

Cu(In,Ga)Se2 thin films (CIGS) on metallic substrate (titanium, molybdenum, aluminum, stainless steel) were prepared by a two-step selenization of Co-evaporated metallic precursors in Se-containing environment under N2 gas flow. Structural properties of prepared thin film were studied. To characterize the optical quality and intrinsic defect nature low-temperature photoluminescence, were performed. Results shows that the structural and optical properties of Cu(In,Ga)Se2 thin films strongly depend on the growth condition, charactristics of substrate and chemical composition. In2S3 thin layer has been used as buffer layer in CIGS solar cells and physical properties of them investigated. Solar cells were completed by vacuum deposition of ZnO/ZnO:Al layers and Ni/Al contact fingers. The surface morphology and bulk composition of thin films were investigated by scanning electron microscopy (SEM) equipped with energy-dispersive X-ray spectroscopy (EDS). The optical testing was carried out by recording transmittance spectra of the samples by spectrophotometers in the spectral range 190–3000 nm at a resolution of 1 nm. The better conversion efficiencies were around 12.0 %.