Design of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT

Design of a Concurrent Dual-Band 1.8–2.4-GHz GaN-HEMT Doherty Power Amplifier

In this paper, the design, implementation, and experimental results of a high-efciency dual-band GaN-HEMT Doherty power amplier (DPA) are presented. An extensive discussion about the design of the passive structures is presented showing different possible topologies of the dual-band DPA. One of the proposed topologies is used to design a dual-band DPA in hybrid technology for the frequency ba...

GaN HEMT and MMIC Design and Evaluation

Analysis of Algan/gan Based Hemt Device for Mmic Design

In this paper AlGaN/GaN heterostructure device analysis carried out which are capable for high power and frequency with performances far superior to those offered by the mainstream silicon technology and other advanced semiconductor technologies. AlGaN/GaN HEMT primarily driven by microwave wireless communication applications need. The last few years have witnessed major effort in the developme...

An Ultra-Low Power InAs/AlSb HEMT X-Band Low-Noise Amplifier and RF Switch

Several antimonide-based compound semiconductor (ABCS) microstrip MMICs, an X-Band low-noise amplifier and an rf switch, using 0.1-μm gate length Antimonide Based Compound Semiconductor (ABCS) metamorphic InAs/AlSb HEMTs, have been fabricated and characterized on a 50 μm GaAs substrate. The compact 0.7 mm two-stage X-band LNA demonstrated a 1.25 dB noise-figure at 10 GHz with an associated gain...

Dual Band High Efficiency Power Amplifier Based on CRLH Lines

In this paper we propose the use of Composite Right/Left Hand (CRLH) and Extended Composite Right/Left Hand (ECRLH) transmission lines for the design of dual band high efficiency power amplifiers working in CE class. The harmonic termination can be synthesized using the meta-lines is particularly suitable for CE class amplifiers, which have a termination not as sensitive to the third harmonic a...

A High Power Cross-Field Amplifier at X-Band* A

A high power cross-field amplifier is under develop ment at SLAC with the objective of providing sufficient peak power to feed a section of an X-Band (11.424 GHz) accelerator without the need for pulse compression. The CFA being designed employs a conventional distributed secondary emission cathode but a novel anode structure which consists of an array of vane resonators alternatively coupled t...