Application of Neural Space Mapping for Modeling Ballistic Carbon Nanotube Transistors

Hysteresis modeling in ballistic carbon nanotube field-effect transistors

Theoretical models are adapted to describe the hysteresis effects seen in the electrical characteristics of carbon nanotube field-effect transistors. The ballistic transport model describes the contributions of conduction energy sub-bands over carbon nanotube field-effect transistor drain current as a function of drain-source and gate-source voltages as well as other physical parameters of the ...

Performance Projections for Ballistic Carbon Nanotube Field-Effect Transistors

The performance limits of carbon nanotube field-effect transistors ~CNTFETs! are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide– semiconductor field-effect transistors ~MOSFETs!. Compared to ballistic MOSFETs, ballistic CNTFETs show similar I – V characteristics but the channel conductance is quantized. For low-voltage, digital applications, the CNT...

Modeling of Carbon Nanotube Field Effect Transistors

Rigorous modeling of carbon nanotube transistors

Based on the non-equilibrium Green’s function formalism the performance of carbon nanotube field-effect transistors has been studied. The effects of elastic and inelastic scattering on the device performance have been investigated. The results indicate that elastic scattering has a more detrimental effect on the device characteristics than inelastic scattering. Only for short devices the perfor...

Modeling of Carbon Nanotube Field-Effect Transistors

In this thesis, models are presented for the design and analysis of carbon nanotube field-effect transistors (CNFETs). Such transistors are being seriously considered for applications in the emerging field of nanotechnology. Because of the small size of these devices, and the nearone-dimensional nature of charge transport within them, CNFET modeling demands a rigorous quantum-mechanical basis. ...

Towards Multi-Scale Modeling of Carbon Nanotube Transistors

Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube electronics. We focus in this paper on one element of that hierarchy, the simulation of ballistic CNT...