Analytical Threshold Voltage Computations for 22 nm Silicon-on-Diamond MOSFET Incorporating a Second Oxide Layer

In this paper, for the first time, an analytical equation for threshold voltage computations in silicon-on-diamond MOSFET with an additional insulation layer is presented; In this structure, the first insulating layer is diamond which covered the silicon substrate and second insulating layer is SiO2 which is on the diamond and it is limited to the source and drain on both sides. Analytical solution was used to determine the threshold voltage by computations of capacitors in buried insulators. Simulation and Analytical results of threshold voltage in silicon-on-diamond and silicon-on-insulator with the same dimensions and channel length were compared. Theeffect of device parameters like gate oxide thickness, silicon body thickness, length and thickness of oxide on threshold voltage of the silicon-on-diamond MOSFET were investigated and the analytical results were compared against device simulation findings.