Oxidation of deposited Aun (n = 2-13) on Si02 /Si : influenceof the NaOH(aq) treatment
نویسندگان
چکیده
ARTICLE INFO ABSTRACT Keywords: Au Cluster Oxidation Au cluster anions consisting of 2-13 atoms were soft-landed on native-oxide-covered Si wafers. Reaction of soft-landed clusters with an atomic oxygen atmosphere was studied using X-ray photoelectron spec-troscopy (XPS)_ Aus. AU7. and AU 13 turned out to show pronounced inertness for Au-oxide formation. When the samples with deposited Au clusters were treated with aqueous NaOH. the inert Au s. AU7. and AU13 clusters became reactive towards Au-oxide formation. whereas the other originally reactive clusters became inert. This result can be interpreted in terms of electronic modification of Au clusters by Na. which was also evidenced by Au 4f and Na 1s core level shifts.
منابع مشابه
Parallel deposition of size-selected clusters: a novel technique for studying size-selectivity on the atomic scale.
A new size-selected cluster deposition technique referred to as "parallel-deposition" is presented. An ion beam of multi-sized Aun clusters was spatially separated into individual cluster sizes by utilizing a Wien filter and the clusters spatially separated based on their atomic sizes were simultaneously deposited on a SiO2/Si(100) substrate. Parallel-deposited Aun clusters (n = 6, 7, and 8) on...
متن کاملThe influence of structure and processing on the behavior of TiO2 protective layers for stabilization of n-Si/TiO2/Ni photoanodes for water oxidation.
Light absorbers with moderate band gaps (1-2 eV) are required for high-efficiency solar fuels devices, but most semiconducting photoanodes undergo photocorrosion or passivation in aqueous solution. Amorphous TiO2 deposited by atomic-layer deposition (ALD) onto various n-type semiconductors (Si, GaAs, GaP, and CdTe) and coated with thin films or islands of Ni produces efficient, stable photoanod...
متن کاملStructure of Semi-Insulating Polycrystalline Silicon (SIPOS)
Semi-Insulating Polycrystalline Silicon (SIPOS) films were deposited on Si02/Si, Si, and sapphire substrates by the chemical vapor deposition of silane and nitroiJs oxide at atmospheric and low pressures. X-ray diffraction was used to identify the phases present, and to study structural properties like grain size and strain as a function of the flow rate ratio, ~, = [N20]/[SiH4].oBoth APCVD and...
متن کاملCharge transport in oxygen-doped polysilicon layers on Si
2014 It is shown that layers of polysilicon doped with oxygen (polydox) can be used for the passivation of underlying p-n junctions. The conduction mechanism was derived from measurements in layers directly deposited on to silicon crystals. At room temperature we found PooleFrenkel conduction changing at higher temperatures, presumably, to hopping in localized states. REVUE DE PHYSIQUE APPLIQUÉ...
متن کاملStudy of multilayer and multi-component coatings deposited using cathodic Arc technique on H-13 hot work steel for die-casting applications
Die casting process is used since long, but even today problems like erosion, corrosion, soldering and sticking affect die life. These dies undergo thermal cyclic loads from 70 oC to 600 oC during processing. Physical Vapor Deposition (PVD) hard coating can play an important role in such extreme applications. In the present work, we report the use of Chromium based multila...
متن کامل