Efficient Pixel Architecture of CMOS Image Sensor using CMOS 180 nm technology
نویسنده
چکیده
This paper describes CMOS Active Pixel Sensor (APS) that has huge demand in imaging systems. The pixel architecture consists of number of NMOS transistors and reverse biased p-n junction diode act as photo sensing element designed in 0.18um CMOS technology. The (64 H X64 V ) pixel array have presented and described. The sensor design contains 5T pixel architecture to investigate the effects by measuring its parameters. The Image Sensor presented in this paper achieves better well capacity, voltage swing and conversion gain. The measured results of sensor have pixel bucket with capacity of (28089 e ), voltage swing of (1.2V) and conversion gain of (79.1uV/e ). By measuring these parameters, the presented pixel architecture can be optimized for several applications.
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