Fabrication of silicon nanostructures with a scanning tunneling microscope
نویسندگان
چکیده
A technique is presented for fabricating Si nanostructures with a scanning tunneling microscope operated in air. The process involves the direct chemical modification of a H-passivated Si( 100) surface and a subsequent liquid etch. The chemically modified portions of the surface can withstand a deep ( > 100 nm) liquid etch of the unmodified regions with no etch degradation of the modified surface. At a write speed of l-10 pm/s, large-area (50 ,um x 50 pm) patterns with lateral feature sizes -25 nm are reliably fabricated.
منابع مشابه
Fabrication of nanostructures with high electrical conductivity on silicon surfaces using a laser-assisted scanning tunneling microscope
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