Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy

نویسندگان

  • X. Guo
  • D. Pei
  • H. Zheng
  • S. W. King
  • Y.-H. Lin
  • H.-S. Fung
  • C.-C. Chen
  • Y. Nishi
  • J. L. Shohet
چکیده

Articles you may be interested in Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics Appl. Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation Appl. The mechanism of low-k SiOCH film modification by oxygen atoms

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تاریخ انتشار 2015