The simulation of high-performance InGaP/InGaAs/GaAs pseudomorphic HEMT
نویسندگان
چکیده
Heterostructure field-effect transistor design criteria are proposed in this study. GaAs pseudomorphic high electron mobility transistors (pHEMTs) are extensively applied to radar satellite receipt dispatcher antenna, and cell phone. Devices for various doped type and different material heterostructure are simulated and analyzed. The δ-doped InGaP/InGaAs/GaAs pHEMT with high density of two dimensional electron gas (2DEG) exhibits an excellent performance in dc operation. Hence, the maximum drain-source current (IDS) was 1650mA/mm and transconductance (Gm) was 2120mS/mm. Index Terms — HEMT, δ-doped , 2DEG, the maximum drain-source current, transconductance.
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