Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si
نویسندگان
چکیده
Amorphization and solid-phase epitaxial growth were studied in C-cluster ion-implanted Si. C7H7 ions were implanted at a C-equivalent energy of 10 keV to C doses of 0.1 9 10 cm 2 to 8.0 9 10 cm 2 into (001) Si wafers. Transmission electron microscopy revealed a C amorphizing dose of 5.0 9 10 cm . Annealing of amorphized specimens to effect solid-phase epitaxial growth resulted in defect-free growth for C doses of 0.5 9 10 cm 2 to 1.0 9 10 cm . At higher doses, growth was defective and eventually polycrystalline due to induced in-plane tensile stress from substitutional C incorporation.
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