A NOVEL TECHNIQUE FOR THE DIRECT DETERMINATION OF CARRIER DIFFUSION LENGTHS IN GaAs/ AlGaAs HETEROSTRUCTURES USING CATHODOLUMINESCENCE
نویسندگان
چکیده
A new technique for determining carrier diffusion lengths in direct gap semiconductors by cathodoluminescence measurement is presented. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, and AlzGa1-zAs with x up to 0.38. A large increase in the diffusion length is found as x approaches 0.38 and is attributed to an order of magnitude increase in lifetime.
منابع مشابه
Time-resolved cathodoluminescence study of carrier relaxation in GaAs/ AlGaAs layers grown on a patterned GaAs(001) substrate
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