Effect of Ge on dislocation nucleation from surface imperfections in Si-Ge
نویسندگان
چکیده
Z. Li, R. C. Picu, R. Muralidhar, and P. Oldiges Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA IBM Corporation, Semiconductor Research and Development Center, Systems and Technology Group, Yorktown Heights, New York 10598, USA IBM Corporation, Semiconductor Research and Development Center, Systems and Technology Group, Hopewell Junction, New York 12533, USA
منابع مشابه
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