Investigation of Parameter Sensitivity of Short Channel Mosfets
نویسنده
چکیده
A strategy to examine the sensitivity of electrical device parameters on geometrical and technological tolerances is described. An approach is offered to determine the limit of device miniaturization for a given fabrication process and a desired operating condition. As a didactic example of practical relevance the minimum channel length for a modern silicon gate, double implant process due to threshold uncertainty is estimated. A method to calculate global sensitivity numbers for the reproducability of miniaturized devices is suggested. As an experimental determination of sensitivities is extremely difficult and expensive, numerical simulations are ideally suited for this purpose
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