Negative thermal expansion of diamond and zinc-blende semiconductors.

نویسندگان

  • Biernacki
  • Scheffler
چکیده

Experimentally it is well known that diamond and zinc-blend semiconductors show an "unusual" (i.e. , negative) thermal expansion at about 100 K. We performed density-functional-theory calculations of thermodynamic potentials (i.e. , total energies and entropies) for perfect crystals, to study the temperature dependence of the lattice parameter. The origin of the negative expansion eff'ect is traced back to the entropy contribution of the Gibbs free energy.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide

We demonstrate the results of two-dimensional (2-D) hydrodynamic simulations of one-finger power heterojunction bipolar transistors (HBTs) on GaAs. An overview of the physical models used and comparisons with experimental data are given. We present models for the thermal conductivity and the specific heat applicable to all relevant diamond and zinc-blende structure semiconductors. They are expr...

متن کامل

Ground State Properties of Rock Salt, CsCl, Diamond and Zinc Blende Structured Solids

In this paper we extend to rock salt, CsCl, diamond and zinc blende structured solids with conduction d electrons the calculation of ground state properties such as bulk modulus and cohesive energy using the plasmon oscillations theory of solids formalism already employed for chalcopyrite semiconductors. The present method is not limited to binary or ternary compounds but can be use for all the...

متن کامل

An energy relaxation time model for device simulation

We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as functions of the carrier and lattice temperatures, and in the case of semiconductor alloys, of the material composition. # 1999 Elsevier Science Ltd. A...

متن کامل

An Analytical Model for the Electron Energy Relaxation Time

We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results, and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as a function of the carrier and lattice temperatures and, in the case of semiconductor alloys, the material composition. keywords: energy relaxation tim...

متن کامل

Stability of undissociated screw dislocations in zinc-blende covalent materials from first principle simulations

– The properties of perfect screw dislocations have been investigated for several zinc-blende materials such as diamond, Si, β-SiC, Ge and GaAs, by performing first principles calculations. For almost all elements, a core configuration belonging to shuffle set planes is favored, in agreement with low temperature experiments. Only for diamond, a glide configuration has the lowest defect energy, ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Physical review letters

دوره 63 3  شماره 

صفحات  -

تاریخ انتشار 1989