On the effect of the barrier widths in the InAs/AlSb/GaSb singlebarrier interband tunneling structures

Articles you may be interested in Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes Appl. Quantization effect on capacitancevoltage and currentvoltage characteristics of an InAs/AlSb/GaSb interband tunneling diode InAs/AlSb/GaSb singlebarrier interband tunneling diodes with high peaktovalley ratios at room temperature The dependence of the interband tunneling current on AlSb barrier widths is studied in the InAsl AISb/GaSb single-barrier diode structures. The experimental results show that the peak current density displays an exponential dependence on the barrier width. The Wentzel-Kramers~Brmouin approximation combined with the k·p two-band model were used in analyzing the energy level in the AlSb barrier through which the peak tunneling currents occur. The energy level thus obtained (0.48 ± 0.10 eV above the valence band edge of the AlSb) agrees with the valence~band offset (0.40 ± 0.15 e V) between the AISb and the GaSh obtained by x-ray photoemission measurement reported by Gualtieri et al. lAppL Phys. Lett. 49, 1037 (1986)]. By adjusting the barrier width properly, we obtained a high peak current density of 24 kA/cm 2 (with a peak~to-val1ey ratio of 1.4) and a high peak-to-valley ratio of 4.5 (with a peak current density of 3.5 kA/cm 2) at room temperature. In addition, the peak-current voltages for different AlSb barrier widths were calculated and compared with the measured results.