Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing
نویسندگان
چکیده
This article describes results obtained using various plasma and surface diagnostics in a study of inductively coupled fluorocarbon plasmas in which the amount of capacitive coupling was systematically varied. It is found that the plasma density decreases while the electron temperature increases as the amount of capacitive coupling is increased at a constant source power level. The rate at which the dielectric coupling window is eroded is found to scale with both the peak-to-peak rf voltage and the ion current density, and the dielectric window erosion is found to influence the resulting plasma gas-phase chemistry. The changes in plasma electrical and chemical characteristics have a large impact on the surface processes occurring in inductively coupled fluorocarbon plasmas such as fluorocarbon deposition, fluorocarbon etching, SiO2 etching and Si etching. Further, we show how the selective SiO2-to-Si etch process changes with varying capacitive coupling. © 1999 American Vacuum Society. @S0734-2101~99!01806-0#
منابع مشابه
Gas-phase studies in inductively coupled fluorocarbon plasmas
Quantitative results from infrared laser absorption spectroscopy ~IRLAS! of CF and CF2 radicals and COF2 products in inductively coupled plasmas fed with C2F6, CHF3 and C4F8 are presented and compared with results simultaneously obtained by mass spectrometry and optical emission spectroscopy. These plasma gas-phase analysis results are discussed and compared to fluorocarbon deposition and etchi...
متن کاملEffects of radio frequency bias frequency and radio frequency bias pulsing on SiO2 feature etching in inductively coupled fluorocarbon plasmas
The effect of radio frequency ~rf! bias frequency on SiO2 feature etching using inductively coupled fluorocarbon plasmas is investigated. It is found that the rf bias frequency can have an important effect on SiO2 feature etch rate, microtrenching phenomena, and SiO2-to-photoresist etch selectivity. In addition, the effect of rf bias pulsing on inductively coupled fluorocarbon plasma SiO2 etchi...
متن کاملEffect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas
We present and discuss results obtained in studies of the mechanisms underlying various feature size dependencies of SiO2 etching in inductively coupled fluorocarbon plasmas. The variation of the fluorocarbon deposition rate and the SiO2 etch rate with both feature size and rf bias power has been measured in a variety of constant aspect ratio features for both an etch stop (C3F6 /H2) and a none...
متن کاملHigh density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer
For various fluorocarbon processing chemistries in an inductively coupled plasma reactor, we have observed relatively thick ~2–7 nm! fluorocarbon layers that exist on the surface during steady state etching of silicon. In steady state, the etch rate and the surface modifications of silicon do not change as a function of time. The surface modifications were characterized by in situ ellipsometry ...
متن کاملPolymer Cleaning From Porous Low-k Dielectrics in He/H2 Plasmas
Porous dielectrics such as SiCOH are used as the insulator in interconnect wiring in microelectronics devices to lower the dielectric constant and therefore decrease the resistive–capacitive delay. After etching a trench in low-k dielectrics in fluorocarbon plasmas, a CFx polymer remains on the sidewalls, which must be removed in a manner that does not damage the low-k material. This can be acc...
متن کامل