Temperature Dependence of Electrical Properties in Regioregular Poly(3-hexylthiophene) Modulated by Chemical Doping
نویسندگان
چکیده
Electrical conductivity and Seebeck coefficient in regioregular poly(3-hexylthiophene) (RR-P3HT) doped with iodine (I2) have been studied in temperature (T) range from 4.2 K to 300 K and from 77 K to 300 K, respectively. In spite of high doping rate (about 30%), RR-P3HT doped with I2 shows a semiconductive behavior in view of temperature dependence of both electrical conductivity and Seebeck coefficient. Temperature dependence of electrical conductivity shows charge transport mechanism of thermally activated hopping below doping rate of about 10% and variable range hopping above doping rate of about 10%. Temperature dependence of Seebeck coefficient shows that energy between Fermi level and valence band decreases with increase in doping rate.
منابع مشابه
High ambipolar and balanced carrier mobility in regioregular poly(3-hexylthiophene)
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