Alloying Kinetics in Contact Metallisation for CMOS

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چکیده

Nickel silicides are widely used in making electrical contact to complementary metal-oxidesemiconductor (CMOS) devices in advanced integrated circuits. They have been the preferred contacting material since the 2006 “65 nm technology node”, partly because a self-aligned-silicide (“SALICIDE” [1]) process is available. However, their high temperature behaviour is complex and, crucially, improved by the presence of platinum.

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تاریخ انتشار 2017