Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness
نویسندگان
چکیده
Marco Califano,1 N. Q. Vinh,2 P. J. Phillips,3 Z. Ikonić,1 R. W. Kelsall,1 P. Harrison,1 C. R. Pidgeon,3 B. N. Murdin,4 D. J. Paul,5 P. Townsend,5 J. Zhang,6 I. M. Ross,7 and A. G. Cullis7 1Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds, LS2 9JT, United Kingdom 2FOM Institute for Plasma Physics “Rijnhuizen,” P. O. Box 1207, NL-3430 BE Nieuwegein, The Netherlands 3Department of Physics, Heriot-Watt University, Edinburgh, EH14 4AS, United Kingdom 4Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, United Kingdom 5Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, United Kingdom 6Department of Physics, Imperial College, London, SW7 2BZ, United Kingdom 7Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, United Kingdom Received 29 September 2006; published 24 January 2007
منابع مشابه
Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
Si/Si0.66Ge0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHVCVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), crosssectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL p...
متن کاملThe Surface Proximity Effect on the Formation of Extended Defects in Ion Beam Synthesised SiGe/Si Heterostructures
The relaxation of ion beam synthesised SiGe alloys occurs during solid phase epitaxial growth (SPEG) by a roughening of the amorphous/crystalline (a/c) interface, leading to the formation of extended defects. SiGe/Si structures have been formed by implantation of Ge+ ions at energies of 70 keV and 400 keV and doses above the critical valae for strain relaxation, followed by post-amorphisation t...
متن کاملNanoscale distortions of Si quantum wells in Si/SiGe quantum-electronic heterostructures.
O N Devices exploiting individual quantum states of electrons promise to extend dramatically the capabilities of silicon integrated electronics. One route to forming such devices is via coup led electrostatically defi ned quantum dots in which electrons are confi ned in a thin strained Si layer on SiGe. [ 1 , 2 ] The unique advantage of forming such quantum dots in Si is the long quantum dephas...
متن کاملn-Si/SiGe quantum cascade structures for THz emission
In this work we report on modelling the electron transport in n-Si/SiGe structures. The electronic structure is calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization. The transport is described via scattering between quantized states, using th...
متن کاملSilicon Epitaxial Regrowth Passivation of SiGe Nanostructures Pattered by AFM Oxidation
SiGe quantum devices were demonstrated by AFM oxidation and selective wet etching with features size down to 50 nm. To passivate the devices and eliminate the interface states between Si/SiO2, low temperature regrowth of epitaxial silicon over strained SiGe has been tested. The silicon regrowth on Si0.8Ge0.2 was done by rapid thermal chemical vapor deposition (RTCVD) at 700 oC using a hydrogen ...
متن کامل