Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces

نویسندگان

  • Alexander Milekhin
  • Nikolay Yeryukov
  • Alexander Toropov
  • Dmitry Dmitriev
  • Evgeniya Sheremet
  • Dietrich RT Zahn
چکیده

We present a comparative analysis of Raman scattering by acoustic and optical phonons in InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces. Doublets of folded longitudinal acoustic phonons up to the fifth order were observed in the Raman spectra of (001)- and (311)B-oriented quantum dot superlattices measured in polarized scattering geometries. The energy positions of the folded acoustic phonons are well described by the elastic continuum model. Besides the acoustic phonons, the spectra display features related to confined transverse and longitudinal optical as well as interface phonons in quantum dots and spacer layers. Their frequency positions are discussed in terms of phonon confinement, elastic stress, and atomic intermixing.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates

The morphology and transition thickness (t(c)) for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated. The morphology varies with the composition of buffer layer and substrate orientation. And t(c) decreased when the thin InGaAs was used as a buffer layer instead of the GaAs layer on (311) B substrates. For InAs/(In)GaAs QDs grown on high miller index surfaces,...

متن کامل

Raman scattering of » As / AlAs strained - layer superlattices 15 OCTOBER 1989 - II

Strained-layer superlattices were the subject of much research work during recent years. In these arti6cial materials, together with the con6nement effect already present in lattice-matched systems, there is another factor, strain, which determines the electronic and phonon properties. As far as the phonon properties are concerned, the main effect of strain is an energy shift with respect to th...

متن کامل

A Comparison between Resonant Raman Scattering in Type II GaAs/AlAs Superlattices and Single GaAs Quantum Wells

We present a comparison between resonant Raman scattering experiments on a type II GaAs/ AlAs superlattice of short period and a single GaAs quantum well. Under resonant excitation, a continuous emission is observed in the low-frequency range of the two heterostructure Raman spectra. This scattering is analyzed in terms of breakdown of the wavevector conservation law due to single quantum-well ...

متن کامل

Distribution and shape of self-assembled InAs quantum dots grown on GaAs (001)*

Grazing incidence small angle X-ray scattering (GISAXS) and atomic force microscopy (AFM) experiments are employed to study self-assembled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on GaAs (001). The GISAXS spectra show pronounced non-specular diffuse scattering satellite peaks with high diffraction orders up to 3 along [110], [1–10], and [100] sample azimuthal orientations ...

متن کامل

Confined electron states in corrugated GaAs/AlAs superlattices

The electronic and optical properties of GaAsIAlAs superlattices grown in the [311] direction are investigated in the framework of an empirical tight-binding model which includes second-neighbor interactions. The [3 111 superlattices are of great interest because of their non-flat interfaces and because the periodic corrugation which appears gives rise to a lateral confinement. This results in ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 7  شماره 

صفحات  -

تاریخ انتشار 2012