NSS-MIC 2006 Conference Record Template
نویسندگان
چکیده
The depletion depth of silicon strip detectors can be inferred from both the reciprocal capacitance and from the amount of collected charge. Admittance measurements are used to extract deep level parameters in order to correct the dependence of capacitance voltage measurements on the frequency of the AC signal applied for irradiated silicon detectors. An equivalent circuit for a PN junction containing deep levels is used to accurately model deep level response. Activation energy, majority carrier cross section and the concentration of active deep levels at the edge of the space charge region is determined. Space charge region depth as a function of the applied voltage is extracted for various detectors irradiated with neutrons and pions. When possible, depleted depths are compared to charge collection measurements.
منابع مشابه
Third International Conference on Network and System Security, NSS 2009, Gold Coast, Queensland, Australia, October 19-21, 2009
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