Compact Modeling of Short Channel Double-Gate MOSFETs
نویسندگان
چکیده
Compact models of short channel effect in symmetric and asymmetric double gate MOSFETs are developed by solving two-dimensional (2-D) Poisson’s equation as a boundary value problem in the subthreshold region. The subthreshold current is obtained through the 2-D analytic potential distribution function. Threshold voltage rolloff, drain induced barrier lowering (DIBL) and subthreshold slope degradation as a function of channel length are extracted from the subthreshold current expression. The short channel effect model is validated by 2-D numerical simulation and incorporated into the analytical potential model for DG MOSFETs.
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