Silicoboron–carbonitride ceramics: A class of high-temperature, dopable electronic materials
نویسندگان
چکیده
The structure and electronic properties of polymer-derived silicoboron–carbonitride ceramics are reported. Structural analysis using radial-distribution-function formalism showed that the local structure is comprised of Si tetrahedra with B, C, and N at the corners. Boron doping of SiCN leads to enhanced p-type conductivity ~0.1 V cm at room temperature!. The conductivity variation with temperature for both SiCN and SiBCN ceramics shows Mott’s variable range hopping behavior in these materials, characteristic of a highly defective semiconductor. The SiBCN ceramic has a low, positive value of thermopower, which is probably due to a compensation mechanism. © 2001 American Institute of Physics. @DOI: 10.1063/1.1370540#
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