Material Identification Methods in Spectral Radiography Using CdTe Semiconductor Detectors
نویسندگان
چکیده
Material identification in radiography is traditionally performed by dualenergy systems, using double exposure technique or two-layers detectors. Performance of such systems results from the closeness of the materials to be discriminated, from photonic noise, and energetic discriminating power of the detector. For difficult problems such as explosive detection in luggage, conventional dual-energy radiography provides only a crude material characterization. Recently emerged semiconductors based X-ray detectors offer new capabilities in energy discrimination. They provide multi-energy data, which require new methods to be processed. This paper is proposing a new material identification method based on an experimental calibration protocol. The identification process relies on a likelihood maximization among the samples of the calibration database. This study is aiming at evaluating the gain brought by spectroscopic detectors for material discrimination.
منابع مشابه
New Perspectives of X-ray Techniques for Explosive Detection Based on CdTe/CdZnTe Spectrometric Detectors
Conventional explosive detection systems (EDS) based on X-ray technologies are using dual-energy radiography; they provide only a crude material characterization. Recently emerged semiconductors based X-ray detectors offer new capabilities in energy discrimination. This study is aiming at evaluating their interest for EDS. LETI-LDET laboratory has developed several pixellated CdTe/CZT detectors...
متن کاملA Method to Improve Spectral Resolution in Planar Semiconductor Gamma-Ray Detectors DISCLAIMER
This paper describes an empirically derived algorithm to compensate for charge trapping in CdTe, CdZnTe, and other planar semiconductor detectors. The method is demonstrated to be an improvement over available systems and application to experimental data is shown.
متن کاملRecent Progress in CdTe and CdZnTe Detectors
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and γray detection. The high atomic number of the materials (ZCd =48, ZTe=52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (Eg ∼ 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of cha...
متن کاملElsevier Editorial System(tm) for Nuclear Inst. and Methods in Physics Research, a Manuscript Draft Title: Time Walk Correction of Cdte Detectors Using Depth Sensing Technique Time Walk Correction of Cdte Detectors Using Depth Sensing Technique
A digital timing method aiming to minimize the time walk caused by the depth-dependent pulse shape variations in CdTe detectors has been developed. Detector pulses are digitized at the preamplifier stage and a full digital process is carried out to deduce and correct the time walk according to the interaction depth. A time resolution of 6.52 ns FWHM at an energy threshold of 150 keV with a CdTe...
متن کاملResults of a Si/CdTe Compton Telescope
We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an a...
متن کامل