Study On Feature Of Silicon Microtrenches With A Multiplexed Inductively Coupled Plasma Etcher

In this paper, dry etching of silicon micro-trenches were completed with a time multiplexed inductively coupled plasma (ICP) etcher. By change the time of etching and passivation cycles, applied electrode and coil powers, gas flow rates and the gas flow overlap due to the finite time response of the mass flow controllers, the etch rate of silicon and mask materials, aspect ratio, the profiles of photoresist and silicon microtrenches were affected. The roughness of the sidewall has been decreased to 20 nm. The relationship between roughness of sidewall and process parameters for different width and depth of silicon trenches are presented.