Modeling of the Thermal Conductivity of Polycrystalline GaN Films
نویسندگان
چکیده
We present preliminary results of a theoretical investigation of the thermal conductivity of polycrystalline GaN films. It is assumed that grain boundaries play a major role in limiting the thermal conductivity, which is calculated using the phononhopping transport approach. The effect of the grain size, size dispersion, and inter-grain interface structure on the thermal conductivity values is analyzed. The obtained results are compared with available experimental data for polycrystalline films and model predictions for crystalline GaN films.
منابع مشابه
Modelling heat conduction in polycrystalline hexagonal boron-nitride films
We conducted extensive molecular dynamics simulations to investigate the thermal conductivity of polycrystalline hexagonal boron-nitride (h-BN) films. To this aim, we constructed large atomistic models of polycrystalline h-BN sheets with random and uniform grain configuration. By performing equilibrium molecular dynamics (EMD) simulations, we investigated the influence of the average grain size...
متن کاملTemperature dependence of thermal conductivity of AlxGa1−xN thin films measured by the differential 3v technique
Reliable values of thermal conductivity of thin films made of GaN and its alloys are important for further development of nitride technology due to the problem of self-heating in GaN-based power transistors and optical devices. Using the differential 3v technique we measured the thermal conductivity of AlxGa1−xN thin films (x=0 and 0.4) grown by the hydride vapor phase epitaxy. Thermal conducti...
متن کاملIncreased thermal conductivity of free-standing low-dislocation-density GaN films
1 Introduction GaN-based wide-band gap materials continue to attract significant attention as promising candidates for the next generation of microwave communication systems and optoelectronic devices [1–3]. For all envisioned applications of GaN materials, it is important to effectively remove the generated heat. Thus, the thermal conductivity K value of GaN is a very important characteristic....
متن کاملOptoelectronic Properties of PbS Films: Effect of Carrier Gas
In this study, lead sulfide (PbS) films were grown on Fluorine-doped TinOxide (FTO) glass substrate by thermal evaporation in a horizontal furnace toinvestigate carrier gas effect on structural, morphological, elemental, optical, electricaland photovoltaic properties of PbS. X-ray diffraction (XRD) patterns confirmed theformation of cubic polycrystalline PbS particles fo...
متن کاملTunable thermal conductivity of thin films of polycrystalline AlN by structural inhomogeneity and interfacial oxidation.
The effect of the structural inhomogeneity and oxygen defects on the thermal conductivity of polycrystalline aluminum nitride (AlN) thin films deposited on single-crystal silicon substrates is experimentally and theoretically investigated. The influence of the evolution of crystal structure, grain size, and out-of plane disorientation along the cross plane of the films on their thermal conducti...
متن کامل