Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy.

نویسندگان

  • Takeo Ohno
  • Yutaka Oyama
چکیده

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High-optical-quality nanosphere lithographically formed InGaAs quantum dots using molecular beam epitaxy assisted GaAs mass transport and overgrowth

Optically active, highly uniform, cylindrical InGaAs quantum dot QD arrays have been fabricated using nanosphere lithography combined with Bromine ion-beam-assisted etching and molecular beam epitaxy MBE -assisted GaAs mass transport. Previously fabricated QD nanopillar arrays showed significant degradation of optical properties due to the etch damage. Here, a novel mass transport process in a ...

متن کامل

Reflectionless tunneling in planar Nb/GaAs hybrid junctions

Reflectionless-tunneling was observed in Nb/GaAs superconductor/semiconductor junctions fabricated through a two-step procedure. First, periodic δ-doped layers were grown by molecular beam epitaxy near the GaAs surface, followed by an As cap layer to protect the surface during ex-situ transfer. Second, Nb was deposited by dc-magnetron sputtering onto the GaAs(001) 2× 4 surface in-situ after the...

متن کامل

Self-organized quantum wires on patterned GaAs(311)A and on unpatterned GaAs(100)

The present work focuses on two types of quantum wire structures which were grown by molecular beam epitaxy (MBE). First, the sidewall quantum wires based on the selective growth on mesa stripe patterned GaAs(311)A are studied. Single stacked sidewall quantum wires with strong electronic coupling have been fabricated. p-i-n type LEDs of the quantum wires employing the amphoteric Si incorporatio...

متن کامل

Lateral p-n junctions for high-density LED arrays

A light-emitting diode array was fabricated using a lateral p–n junction to inject carriers in the InGaAs active layer. The lateral p–n junction is formed in GaAs epilayers doped only with silicon and grown by molecular beam epitaxy on a patterned GaAs (311)A-oriented substrate. This design allows the use of electrically insulating carrier-confining barriers and coplanar contacts while simplify...

متن کامل

Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy

Several oxide-GaAs heterostructures were fabricated using in situ multiple-chamber molecular beam epitaxy. The oxides include SiO2, MgO, and Ga2O3~Gd2O3!, all evaporated by an electron beam method. The SiO2 and Ga2O3~Gd2O3! films are amorphous while the MgO films are crystalline and part of the films are epitaxially grown on GaAs~100!. Among these heterostructures, the Ga2O3~Gd2O3!–GaAs shows a...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Science and technology of advanced materials

دوره 13 1  شماره 

صفحات  -

تاریخ انتشار 2012