Electrical and Material Characteristics of Hafnium-based Multi-metal High-k Gate Dielectrics for Future Scaled CMOS Technology: Physics, Reliability, and Process Development
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چکیده
منابع مشابه
Novel Hafnium-Based Compound Metal Oxide Gate Dielectrics for Advanced CMOS Technology
Abstract: Improvement of Hf-based high-k gate dielectrics by incorporating Ta and La in HfO2 are investigated systematically. The main issues of pure HfO2 gate dielectric, including low crystallization temperature, channel mobility degradation, and bias temperature instability (BTI) degradation, can be effectively improved in HfTaO and HfLaO. Particularly, HfLaO with appropriate metal gate mate...
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The reduction of the equivalent oxide thickness (EOT) of the gate oxide has emerged as one of the most difficult tasks addressing future CMOS technology. In order to overcome gate tunneling, the introduction of so-called high-κ materials will be necessary [1]. Hafnium dioxide, HfO2 [2], zirconium dioxide, ZrO2 [3], and their silicates are assumed to be the most promising candidates to fulfil th...
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Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and depositi...
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