Microcrystalline and micromorph device improvements through combined plasma and material characterization techniques

Hydrogenated microcrystalline silicon ðmc Si : HÞ growth by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) is studied in an industrial-type parallel plate KAI reactor. Combined plasma and material characterization techniques allow to assess critical deposition parameters for the fabrication of high quality material. A relation between low intrinsic stress of the deposited i-layer and better performing solar cell devices is identified. Significant solar cell device improvements were achieved based on these findings: high open circuit voltages above 520mV and fill factors above 74% were obtained for 1mm thick mc Si : H single junction cells and a 1.2 cm micromorph device with 12.3% initial (Voc1⁄41.33V, FF1⁄472.4%, Jsc1⁄412.8mAcm ) and above 10.0% stabilized efficiencies. & 2010 Elsevier B.V. All rights reserved.