Surface dangling bonds are a cause of B-type blinking in Si nanoparticles.

Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds

The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon c-Si surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amorphous hydrogenated silicon a-Si:H on monocrystalline Si wafers are investigated here. We introduce a simple model for the description of the surface...

Spectroscopic characterization of a single dangling bond on a bare Si(100)-c(4 × 2) surface for n- and p-type doping

We investigate the charging state of an isolated single dangling bond formed on an unpassivated Si(100) surface with c(4× 2) reconstruction, by comparing scanning tunneling microscopy and spectroscopy analysis with density functional theory calculations. The dangling bond is created by placing a single hydrogen atom on the bare surface with the tip of a scanning tunneling microscope. The H atom...

Theoretical study of isolated dangling bonds, dangling bond wires, and dangling bond clusters on a H : Si(001)-(2x1) surface

Recombination through amphoteric states at the amorphous/crystalline silicon interface: modelling and experiment

The performance of high-efficient crystalline silicon (c-Si) based solar cells is, besides bulk recombination, limited by the recombination losses on both c-Si surfaces. Dangling bonds at the c-Si surface are the defects governing interface recombination irrespective of the overlaying passivation layer (i.e. SiO2, SixNy, a-Si:H). Dangling bonds are also the predominant defects governing recombi...

Precursor mechanism for interaction of bulk interstitial atoms with Si„100..

In the same way that gases react with surfaces from above, solid-state point defects such as interstitial atoms can react from below. Little attention has been paid to this form of surface chemistry. Recent bulk selfdiffusion measurements near the Si 100 surface have quantified Si interstitial annihilation rates, and shown that these rates can be described by an annihilation probability that va...