Temperature-dependent photoluminescence of GaInPÕAlGaInP multiple quantum well laser structure grown by metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine

A GaInP/AlGaInP multiple quantum well laser structure was grown by low-pressure metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine. Laser diodes fabricated from this structure lased at room temperature. Photoluminescence ~PL! measurements were performed from 10 to 230 K. The PL energy increased with temperature from 10 to 70 K and decreased above 70 K. The former was attributed to thermal activation of trapped carriers due to localization in the quantum wells, while the latter was attributed to temperature-induced band-gap shrinkage. The PL intensity as a function of temperature was fitted by employing two nonradiative recombination mechanisms with good agreement, resulting in two activation energies that correspond to losses of photogenerated carriers to nonradiative centers. © 2003 American Institute of Physics. @DOI: 10.1063/1.1597977#