Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals.
نویسندگان
چکیده
Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.
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ورودعنوان ژورنال:
- Chemical communications
دوره 48 34 شماره
صفحات -
تاریخ انتشار 2012