Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain
نویسندگان
چکیده
Silicon, the main material of microelectronics, is predominantly composed of nuclei with zero spin and is characterised by weak spin-orbit interaction in the conduction band. This insures long distance spin propagation through the bulk, which in combination with a possibility of injecting spin at room temperature [2] makes fabrication of spin-based switching devices in the near future feasible. However, the experimentally observed enhancement in spin relaxation in electrically gated lateral-channel silicon structures [3] is an obstacle and a deeper understanding of fundamental spin relaxation mechanisms in silicon MOSFETs is urgently needed.
منابع مشابه
Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors
The potential of reduction of power consumption and the growth of computational speed achieved by scaling of semiconductor devices is close to exhaustion. Utilizing spin properties of electrons might provide an opportunity for further improvement of the properties of microelectronic-based devices. Since silicon is the main material currently used in microelectronics, we investigate the properti...
متن کاملShear Strain: An Efficient Spin Lifetime Booster in Advanced UTB SOI MOSFETs
Introduction Since microelectronics plays a significant role in everyday’s life, big efforts are devoted to the problem of minimizing power consumption by reducing the physical dimensions of microelectronic devices. An alternative approach to reduce power consumption and boost the performance is to utilize spin properties of electrons. Spintronics attracts much attention recently, and a number ...
متن کاملCalculation of the electron mobility and spin lifetime enhancement by strain in thin silicon films
Spintronics attracts much attention because of the potential to build novel spin-based devices which are superior to nowadays charge-based microelectronic devices. Silicon, the main element of microelectronics, is promising for spin-driven applications. Understanding the details of the spin propagation in silicon structures is a key for building novel spin-based nanoelectronic devices. We inves...
متن کاملAcoustic phonon and surface roughness spin relaxation mechanisms in strained ultra-scaled silicon films
We consider the impact of the surface roughness and phonon induced relaxation on transport and spin characteristics in ultra-thin SOI MOSFET devices. We show that the regions in the momentum space, which are responsible for strong spin relaxation, can be efficiently removed by applying uniaxial strain. The spin lifetime in strained films can be improved by orders of magnitude, while the momentu...
متن کاملElectron Momentum and Spin Relaxation in Silicon Films: A Rigorous k p-based Approach
Growing technological challenges and soaring costs are gradually bringing the MOSFET scaling to an end. This intensifies the search of alternative technologies and computational principles. The electron spin attracts attention as a possible candidate to be used in future electron devices for complimenting or even replacing the charge degree of freedom employed in MOSFETs. The spin state is char...
متن کامل