Two-domain formation during the epitaxial growth of GaN (0001) on c-planeAl2O3 (0001) by high power impulse magnetron sputtering
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چکیده
Junaid Muhammad, Daniel Lundin, Justinas Palisaitis, Ching-Lien Hsiao, Vanya Darakchieva, Jens Jensen, Per Persson, Per Sandström, W-J Lai, L-C Chen, K-H Chen, Ulf Helmersson, Lars Hultman and Jens Birch, Two-domain formation during the epitaxial growth of GaN (0001) on c-planeAl2O3 (0001) by high power impulse magnetron sputtering, 2011, Journal of Applied Physics, (110), 123519. http://dx.doi.org/10.1063/1.3671560 Copyright: American Institute of Physics
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تاریخ انتشار 2012