Ambipolar Effect Free Double Gate PN Diode Based Tunnel FET
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منابع مشابه
Performance Analysis of Double Hetero-gate Tunnel Field Effect Transistor
A hetero gate dielectric low band gap material DG Tunnel FET is presented here. The investigated device is almost free from short channel effects like DIBL and t V rolloff. Simulation of the device characteristics shows significant improvement over conventional double gate TFET when compared interms of on current, ambipolar current, roll-off, miller capacitance and, device delay time. Simulatio...
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To manage the increasing static leakage in low power applications and reduced Ion/Ioff due to aggressive scaling of MOS transistors, Tunnel FET (TFET) devices are considered as the most promising candidates because of their excellent immunity against such important short channel effects. Solutions for leakage reduction as well as improving on current of the device are sought at the device desig...
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In this paper, we propose and validate a novel design for a double-gate tunnel fi eld-effect transistor (DG Tunnel FET), for which the simulations show significant improvements compared with single-gate devices using an SiO2 gate dielectric. For the fi rst time, DG Tunnel FET devices, which are using a high-κ gate dielectric, are explored using realistic design parameters, showing an ON-current...
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In this paper fringe capacitance of double hetero gate Tunnel FET has been studied. The physical model for fringe capacitance is derived considering source gate overlap and gate drain non overlap. Inerface trap charge and oxide charges are also introduced under positive bias stress and hot carrier stress and their effect on fringe capacitance is also studied. The fringe capacitance is significa...
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Inter-band tunnel field effect transistors (TFETs) have recently gained a lot of interest because of their ability to eliminate the 60mV/dec sub-threshold slope (STS) limitation in MOSFET. This can result in higher ION-IOFF ratio over a reduced gate voltage range, thus predicting TFETs superior for low supply voltage (VDD 0.5V) operation. Unlike Si and Ge, III-V semiconductors like In0.53Ga0....
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